FQT1N60CTF-WS MOSFET Datasheet & Specifications
N-Channel
SOT-223
High-Voltage
onsemi
Vds Max
600V
Id Max
200mA
Rds(on)
11.5ฮฉ@10V
Vgs(th)
4V
Quick Reference
The FQT1N60CTF-WS is an N-Channel MOSFET in a SOT-223 package, manufactured by onsemi. It supports a drain-source breakdown voltage of 600V and a continuous drain current of 200mA. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | SOT-223 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 600V | Max breakdown voltage |
| Continuous Drain Current (Id) | 200mA | Max current handling |
| Power Dissipation (Pd) | 2.1W | Max thermal limit |
| On-Resistance (Rds(on)) | 11.5ฮฉ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 4V | Voltage required to turn on |
| Gate Charge (Qg) | 6.2nC@10V | Switching energy |
| Input Capacitance (Ciss) | 170pF | Internal gate capacitance |
| Output Capacitance (Coss) | 25pF | Internal output capacitance |
| Operating Temp | -55โ~+150โ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| 2N60G | N-Channel | SOT-223 | 600V | 2A | 4.2ฮฉ@10V | 4V | UMW ๐ PDF |
| STN1HNK60 | N-Channel | SOT-223 | 600V | 400mA | 8.5ฮฉ@10V | 3.7V | ST ๐ PDF |
| 1N60G | N-Channel | SOT-223 | 600V | 1A | 8.5ฮฉ@10V | 4V | UMW ๐ PDF |
| 1N60G-AA3-R | N-Channel | SOT-223 | 600V | 1A | 12ฮฉ@10V | 4V | UTC ๐ PDF |
| 1N65G | N-Channel | SOT-223 | 650V | 1A | 11ฮฉ@10V | 4V | UMW ๐ PDF |