FQD5N20L-TP MOSFET Datasheet & Specifications
N-Channel
TO-252-3L
Standard Power
TECH PUBLIC
Vds Max
200V
Id Max
6A
Rds(on)
690mΩ@10V
Vgs(th)
4V
Quick Reference
The FQD5N20L-TP is an N-Channel MOSFET in a TO-252-3L package, manufactured by TECH PUBLIC. It supports a drain-source breakdown voltage of 200V and a continuous drain current of 6A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | TECH PUBLIC | Original Manufacturer |
| Package | TO-252-3L | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 200V | Max breakdown voltage |
| Continuous Drain Current (Id) | 6A | Max current handling |
| Power Dissipation (Pd) | 38.4W | Max thermal limit |
| On-Resistance (Rds(on)) | 690mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 4V | Voltage required to turn on |
| Gate Charge (Qg) | 5.1nC@10V | Switching energy |
| Input Capacitance (Ciss) | 182pF | Internal gate capacitance |
| Output Capacitance (Coss) | 46.9pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |