XR60R500 MOSFET Datasheet & Specifications
N-Channel
TO-252-3L
High-Voltage
XNRUSEMI
Vds Max
600V
Id Max
7A
Rds(on)
530mΩ@10V
Vgs(th)
3.5V
Quick Reference
The XR60R500 is an N-Channel MOSFET in a TO-252-3L package, manufactured by XNRUSEMI. It supports a drain-source breakdown voltage of 600V and a continuous drain current of 7A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | XNRUSEMI | Original Manufacturer |
| Package | TO-252-3L | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 600V | Max breakdown voltage |
| Continuous Drain Current (Id) | 7A | Max current handling |
| Power Dissipation (Pd) | 63W | Max thermal limit |
| On-Resistance (Rds(on)) | 530mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 3.5V | Voltage required to turn on |
| Gate Charge (Qg) | 10.8nC@480V | Switching energy |
| Input Capacitance (Ciss) | 317pF | Internal gate capacitance |
| Output Capacitance (Coss) | 22pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |