FDP18N50 MOSFET Datasheet & Specifications
N-Channel
TO-220
High-Voltage
onsemi
Vds Max
500V
Id Max
18A
Rds(on)
265mΩ@10V
Vgs(th)
5V
Quick Reference
The FDP18N50 is an N-Channel MOSFET in a TO-220 package, manufactured by onsemi. It supports a drain-source breakdown voltage of 500V and a continuous drain current of 18A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | TO-220 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 500V | Max breakdown voltage |
| Continuous Drain Current (Id) | 18A | Max current handling |
| Power Dissipation (Pd) | 235W | Max thermal limit |
| On-Resistance (Rds(on)) | 265mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 5V | Voltage required to turn on |
| Gate Charge (Qg) | 60nC@10V | Switching energy |
| Input Capacitance (Ciss) | 2.86nF | Internal gate capacitance |
| Output Capacitance (Coss) | 430pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| STP28N60DM2 | N-Channel | TO-220 | 600V | 21A | 160mΩ@10V | 5V | ST 📄 PDF |
| STP26NM60N | N-Channel | TO-220 | 600V | 20A | 165mΩ@10V | 4V | ST 📄 PDF |
| CRJT99N65G2 | N-Channel | TO-220 | 650V | 35A | 81mΩ@10V | 4V | CRMICRO 📄 PDF |
| NCE65N180 | N-Channel | TO-220 | 650V | 20A | 160mΩ@10V | 3.5V | NCE 📄 PDF |
| STP20N65M5 | N-Channel | TO-220 | 650V | 18A | 190mΩ@10V | 5V | ST 📄 PDF |