STP26NM60N MOSFET Datasheet & Specifications
N-Channel
TO-220
High-Voltage
ST
Vds Max
600V
Id Max
20A
Rds(on)
165mΩ@10V
Vgs(th)
4V
Quick Reference
The STP26NM60N is an N-Channel MOSFET in a TO-220 package, manufactured by ST. It supports a drain-source breakdown voltage of 600V and a continuous drain current of 20A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | ST | Original Manufacturer |
| Package | TO-220 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 600V | Max breakdown voltage |
| Continuous Drain Current (Id) | 20A | Max current handling |
| Power Dissipation (Pd) | 140W | Max thermal limit |
| On-Resistance (Rds(on)) | 165mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 4V | Voltage required to turn on |
| Gate Charge (Qg) | 60nC@10V | Switching energy |
| Input Capacitance (Ciss) | 1.8nF | Internal gate capacitance |
| Output Capacitance (Coss) | 115pF | Internal output capacitance |
| Operating Temp | - | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| CRJT99N65G2 | N-Channel | TO-220 | 650V | 35A | 81mΩ@10V | 4V | CRMICRO 📄 PDF |
| NCE65N180 | N-Channel | TO-220 | 650V | 20A | 160mΩ@10V | 3.5V | NCE 📄 PDF |