FDD8447L-HXY MOSFET Datasheet & Specifications

N-Channel TO-252-2L Logic-Level HXY MOSFET
Vds Max
40V
Id Max
60A
Rds(on)
8.5mΩ@10V
Vgs(th)
2V

Quick Reference

The FDD8447L-HXY is an N-Channel MOSFET in a TO-252-2L package, manufactured by HXY MOSFET. It supports a drain-source breakdown voltage of 40V and a continuous drain current of 60A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerHXY MOSFETOriginal Manufacturer
PackageTO-252-2LPhysical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)40VMax breakdown voltage
Continuous Drain Current (Id)60AMax current handling
Power Dissipation (Pd)64.6WMax thermal limit
On-Resistance (Rds(on))8.5mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))2VVoltage required to turn on
Gate Charge (Qg)29nC@10VSwitching energy
Input Capacitance (Ciss)1.8nFInternal gate capacitance
Output Capacitance (Coss)280pFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
NCE40H12K N-Channel TO-252-2L 40V 120A 7mΩ@4.5V 2.5V
AP75N04K N-Channel TO-252-2L 40V 75A 12mΩ@4.5V 2.5V
ALLPOWER 📄 PDF
NCE4060K N-Channel TO-252-2L 40V 60A 13mΩ@10V 2.5V
NCEP60T12AK N-Channel TO-252-2L 60V 120A 4mΩ@10V 2.4V
NCE6080AK N-Channel TO-252-2L 60V 80A 7.8mΩ@4.5V 1.8V
CJU80SN10 N-Channel TO-252-2L 100V 80A 10.5mΩ@4.5V 2.5V
NCEP0178AK N-Channel TO-252-2L 100V 78A 12mΩ@4.5V 2.2V
HSU0096 N-Channel TO-252-2L 100V 60A 14mΩ@4.5V 2.5V
HUASHUO 📄 PDF