HSU0096 MOSFET Datasheet & Specifications

N-Channel TO-252-2L Logic-Level HUASHUO
Vds Max
100V
Id Max
60A
Rds(on)
14mΩ@4.5V
Vgs(th)
2.5V

Quick Reference

The HSU0096 is an N-Channel MOSFET in a TO-252-2L package, manufactured by HUASHUO. It supports a drain-source breakdown voltage of 100V and a continuous drain current of 60A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerHUASHUOOriginal Manufacturer
PackageTO-252-2LPhysical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)100VMax breakdown voltage
Continuous Drain Current (Id)60AMax current handling
Power Dissipation (Pd)73WMax thermal limit
On-Resistance (Rds(on))14mΩ@4.5VResistance when turned fully on
Gate Threshold (Vgs(th))2.5VVoltage required to turn on
Gate Charge (Qg)26nC@10VSwitching energy
Input Capacitance (Ciss)1.41nFInternal gate capacitance
Output Capacitance (Coss)495pFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
CJU80SN10 N-Channel TO-252-2L 100V 80A 10.5mΩ@4.5V 2.5V
NCEP0178AK N-Channel TO-252-2L 100V 78A 12mΩ@4.5V 2.2V