FDD7N20TM MOSFET Datasheet & Specifications

N-Channel TO-252(DPAK) Standard Power onsemi
Vds Max
200V
Id Max
5A
Rds(on)
690mΩ@10V
Vgs(th)
5V

Quick Reference

The FDD7N20TM is an N-Channel MOSFET in a TO-252(DPAK) package, manufactured by onsemi. It supports a drain-source breakdown voltage of 200V and a continuous drain current of 5A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageTO-252(DPAK)Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)200VMax breakdown voltage
Continuous Drain Current (Id)5AMax current handling
Power Dissipation (Pd)43WMax thermal limit
On-Resistance (Rds(on))690mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))5VVoltage required to turn on
Gate Charge (Qg)6.7nC@10VSwitching energy
Input Capacitance (Ciss)250pFInternal gate capacitance
Output Capacitance (Coss)65pFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
STD5NM50AG N-Channel TO-252(DPAK) 500V 7.5A 800mΩ@10V 5V
MMD60R400RFZRH N-Channel TO-252(DPAK) 600V 11A 360mΩ@10V 4V
MagnaChip Sem... 📄 PDF
STD13NM60N N-Channel TO-252(DPAK) 600V 11A 360mΩ@10V 4V
STD13N60DM2 N-Channel TO-252(DPAK) 600V 11A 365mΩ@10V 5V
FCD380N60E N-Channel TO-252(DPAK) 600V 10.2A 380mΩ@10V 3.5V
onsemi 📄 PDF
STD10NM60N N-Channel TO-252(DPAK) 600V 10A 550mΩ@10V 4V
STD7NM60N N-Channel TO-252(DPAK) 600V 5A 900mΩ@10V 4V
STD7N60M2 N-Channel TO-252(DPAK) 600V 5A 950mΩ@10V 4V
TK290P65Y N-Channel TO-252(DPAK) 650V 11.5A 290mΩ@10V 4V
TOSHIBA 📄 PDF