STD5NM50AG MOSFET Datasheet & Specifications
N-Channel
TO-252(DPAK)
High-Voltage
ST
Vds Max
500V
Id Max
7.5A
Rds(on)
800mΩ@10V
Vgs(th)
5V
Quick Reference
The STD5NM50AG is an N-Channel MOSFET in a TO-252(DPAK) package, manufactured by ST. It supports a drain-source breakdown voltage of 500V and a continuous drain current of 7.5A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | ST | Original Manufacturer |
| Package | TO-252(DPAK) | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 500V | Max breakdown voltage |
| Continuous Drain Current (Id) | 7.5A | Max current handling |
| Power Dissipation (Pd) | 100W | Max thermal limit |
| On-Resistance (Rds(on)) | 800mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 5V | Voltage required to turn on |
| Gate Charge (Qg) | 13nC@10V | Switching energy |
| Input Capacitance (Ciss) | 415pF | Internal gate capacitance |
| Output Capacitance (Coss) | 88pF | Internal output capacitance |
| Operating Temp | - | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| MMD60R400RFZRH | N-Channel | TO-252(DPAK) | 600V | 11A | 360mΩ@10V | 4V | MagnaChip Sem... 📄 PDF |
| STD13NM60N | N-Channel | TO-252(DPAK) | 600V | 11A | 360mΩ@10V | 4V | ST 📄 PDF |
| STD13N60DM2 | N-Channel | TO-252(DPAK) | 600V | 11A | 365mΩ@10V | 5V | ST 📄 PDF |
| FCD380N60E | N-Channel | TO-252(DPAK) | 600V | 10.2A | 380mΩ@10V | 3.5V | onsemi 📄 PDF |
| STD10NM60N | N-Channel | TO-252(DPAK) | 600V | 10A | 550mΩ@10V | 4V | ST 📄 PDF |
| TK290P65Y | N-Channel | TO-252(DPAK) | 650V | 11.5A | 290mΩ@10V | 4V | TOSHIBA 📄 PDF |