FCX605TA Datasheet & Equivalents

NPN SOT-89 General Purpose DIODES
VCEO
120V
Ic Max
1A
Pd Max
1W
hFE Gain
2000
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Quick Reference

The FCX605TA is a NPN bipolar junction transistor in a SOT-89 package, manufactured by DIODES. It supports a breakdown voltage of 120V and continuous collector current of 1A. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackageSOT-89Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)120VMax breakdown voltage
Collector Current (Ic)1AMax current handling
Power Dissipation (Pd)1WMax thermal limit
DC Current Gain (hFE)2000Base signal amplification ratio
Transition Frequency (fT)150MHzMax operating frequency
Saturation Voltage (VCEsat)1.5VVoltage drop when fully ON
Emitter-Base Voltage (Vebo)-Max emitter-base breakdown
Collector Cutoff Current-Leakage current when OFF
Operating Temp-55℃~+150℃@(Tj)Safe junction temperature range

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NPN Bipolar Transistors High-Power NPN BJTs High-Frequency NPN BJTs SOT-89 NPN BJTs