E100N1P5OH1 MOSFET Datasheet & Specifications

N-Channel TOLL-8 High-Current Existar
Vds Max
100V
Id Max
330A
Rds(on)
1.5mΩ@10V
Vgs(th)
3.8V

Quick Reference

The E100N1P5OH1 is an N-Channel MOSFET in a TOLL-8 package, manufactured by Existar. It supports a drain-source breakdown voltage of 100V and a continuous drain current of 330A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerExistarOriginal Manufacturer
PackageTOLL-8Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)100VMax breakdown voltage
Continuous Drain Current (Id)330AMax current handling
Power Dissipation (Pd)430WMax thermal limit
On-Resistance (Rds(on))1.5mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))3.8VVoltage required to turn on
Gate Charge (Qg)362nC@10VSwitching energy
Input Capacitance (Ciss)21.91nFInternal gate capacitance
Output Capacitance (Coss)2.94nFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
HK10N015SG N-Channel TOLL-8 100V 370A 1.1mΩ@10V 3V
MPT015N10-T N-Channel TOLL-8 100V 480A 1.12mΩ@10V 3V
Minos 📄 PDF
HK10N020SG N-Channel TOLL-8 100V 350A 1.3mΩ@10V 3V