HK10N020SG MOSFET Datasheet & Specifications

N-Channel TOLL-8 Logic-Level R+O
Vds Max
100V
Id Max
350A
Rds(on)
1.3mΩ@10V
Vgs(th)
3V

Quick Reference

The HK10N020SG is an N-Channel MOSFET in a TOLL-8 package, manufactured by R+O. It supports a drain-source breakdown voltage of 100V and a continuous drain current of 350A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerR+OOriginal Manufacturer
PackageTOLL-8Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)100VMax breakdown voltage
Continuous Drain Current (Id)350AMax current handling
Power Dissipation (Pd)370WMax thermal limit
On-Resistance (Rds(on))1.3mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))3VVoltage required to turn on
Gate Charge (Qg)175nC@10VSwitching energy
Input Capacitance (Ciss)12.22nFInternal gate capacitance
Output Capacitance (Coss)-Internal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
HK10N015SG N-Channel TOLL-8 100V 370A 1.1mΩ@10V 3V
MPT015N10-T N-Channel TOLL-8 100V 480A 1.12mΩ@10V 3V
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