DZT5551Q-13 Datasheet & Equivalents

NPN SOT-223 General Purpose DIODES
VCEO
160V
Ic Max
600mA
Pd Max
2W
hFE Gain
80

Quick Reference

The DZT5551Q-13 is a NPN bipolar junction transistor in a SOT-223 package, manufactured by DIODES. It supports a breakdown voltage of 160V and continuous collector current of 600mA. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackageSOT-223Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)160VMax breakdown voltage
Collector Current (Ic)600mAMax current handling
Power Dissipation (Pd)2WMax thermal limit
DC Current Gain (hFE)80Base signal amplification ratio
Transition Frequency (fT)300MHzMax operating frequency
Saturation Voltage (VCEsat)150mVVoltage drop when fully ON
Emitter-Base Voltage (Vebo)6VMax emitter-base breakdown
Collector Cutoff Current50nALeakage current when OFF
Operating Temp-55โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
CZT5551 TR NPN SOT-223 160V 600mA 80 2W
DZT5551-13 NPN SOT-223 160V 600mA 80 2W
ZXTN5551GTA NPN SOT-223 160V 600mA 80 2W
CZT5551 NPN SOT-223 160V 600mA 80 1W
CZT5551 NPN SOT-223 160V 600mA 80 2W
GOODWORK ๐Ÿ“„ PDF
CZT5551-JSM NPN SOT-223 160V 600mA 250 2W
PZT5551-TP NPN SOT-223 160V 600mA 250 1W
CZT5551 NPN SOT-223 160V 600mA 400 1.5W
PZT5551G-B-AA3-R NPN SOT-223 160V 690mA 400 2W
STN2580 NPN SOT-223 400V 1A 60 1.6W
STN83003 NPN SOT-223 400V 1.5A 16 1.6W