PZT5551G-B-AA3-R Datasheet & Equivalents
NPN
SOT-223
General Purpose
UTC
VCEO
160V
Ic Max
690mA
Pd Max
2W
hFE Gain
400
Quick Reference
The PZT5551G-B-AA3-R is a NPN bipolar junction transistor in a SOT-223 package, manufactured by UTC. It supports a breakdown voltage of 160V and continuous collector current of 690mA. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | UTC | Original Manufacturer |
| Package | SOT-223 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 160V | Max breakdown voltage |
| Collector Current (Ic) | 690mA | Max current handling |
| Power Dissipation (Pd) | 2W | Max thermal limit |
| DC Current Gain (hFE) | 400 | Base signal amplification ratio |
| Transition Frequency (fT) | 300MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | 200mV | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | 6V | Max emitter-base breakdown |
| Collector Cutoff Current | 50nA | Leakage current when OFF |
| Operating Temp | - | Safe junction temperature range |