DXT3904-13 Datasheet & Equivalents

NPN SOT-89 General Purpose DIODES
VCEO
40V
Ic Max
200mA
Pd Max
1.2W
hFE Gain
100

Quick Reference

The DXT3904-13 is a NPN bipolar junction transistor in a SOT-89 package, manufactured by DIODES. It supports a breakdown voltage of 40V and continuous collector current of 200mA. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackageSOT-89Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)40VMax breakdown voltage
Collector Current (Ic)200mAMax current handling
Power Dissipation (Pd)1.2WMax thermal limit
DC Current Gain (hFE)100Base signal amplification ratio
Transition Frequency (fT)300MHzMax operating frequency
Saturation Voltage (VCEsat)200mVVoltage drop when fully ON
Emitter-Base Voltage (Vebo)6VMax emitter-base breakdown
Collector Cutoff Current50nALeakage current when OFF
Operating Temp-55โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
2N3904U NPN SOT-89 40V 200mA 100 500mW
PXT3904 NPN SOT-89 40V 200mA 300 500mW
CXT3904TR-HXY NPN SOT-89 50V 200mA 300 500mW
HXY MOSFET ๐Ÿ“„ PDF
DXT3904-13-HXY NPN SOT-89 50V 200mA 300 500mW
HXY MOSFET ๐Ÿ“„ PDF
PXT3904-HXY NPN SOT-89 50V 200mA 300 500mW
HXY MOSFET ๐Ÿ“„ PDF