DXT3904-13-HXY Datasheet & Equivalents
NPN
SOT-89
General Purpose
HXY MOSFET
VCEO
50V
Ic Max
200mA
Pd Max
500mW
hFE Gain
300
Quick Reference
The DXT3904-13-HXY is a NPN bipolar junction transistor in a SOT-89 package, manufactured by HXY MOSFET. It supports a breakdown voltage of 50V and continuous collector current of 200mA. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | HXY MOSFET | Original Manufacturer |
| Package | SOT-89 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 50V | Max breakdown voltage |
| Collector Current (Ic) | 200mA | Max current handling |
| Power Dissipation (Pd) | 500mW | Max thermal limit |
| DC Current Gain (hFE) | 300 | Base signal amplification ratio |
| Transition Frequency (fT) | 300MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | - | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | - | Max emitter-base breakdown |
| Collector Cutoff Current | - | Leakage current when OFF |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | IC | hFE | Pd | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| CXT3904TR-HXY | NPN | SOT-89 | 50V | 200mA | 300 | 500mW | HXY MOSFET 📄 PDF |
| PXT3904-HXY | NPN | SOT-89 | 50V | 200mA | 300 | 500mW | HXY MOSFET 📄 PDF |