DTC114YE-MS Datasheet & Equivalents

NPN SOT-523 General Purpose MSKSEMI
VCEO
50V
Ic Max
100mA
Pd Max
150mW
hFE Gain
140

Quick Reference

The DTC114YE-MS is a NPN bipolar junction transistor in a SOT-523 package, manufactured by MSKSEMI. It supports a breakdown voltage of 50V and continuous collector current of 100mA. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerMSKSEMIOriginal Manufacturer
PackageSOT-523Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)50VMax breakdown voltage
Collector Current (Ic)100mAMax current handling
Power Dissipation (Pd)150mWMax thermal limit
DC Current Gain (hFE)140Base signal amplification ratio
Transition Frequency (fT)-Max operating frequency
Saturation Voltage (VCEsat)-Voltage drop when fully ON
Emitter-Base Voltage (Vebo)-Max emitter-base breakdown
Collector Cutoff Current100nALeakage current when OFF
Operating Temp-55โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
DTC114TE NPN SOT-523 50V 100mA 100 150mW
2SC4617 NPN SOT-523 50V 150mA 120 150mW
2SC4617TLR NPN SOT-523 50V 150mA 180 150mW
2DC4617S-7-F NPN SOT-523 50V 150mA 270 150mW
2SC4617R NPN SOT-523 50V 150mA 390 150mW
2SC4617 NPN SOT-523 50V 150mA 390 150mW
HXY MOSFET ๐Ÿ“„ PDF
2SC4738 NPN SOT-523 50V 150mA 700 100mW