DTC114TE Datasheet & Equivalents

NPN SOT-523 General Purpose JSCJ
VCEO
50V
Ic Max
100mA
Pd Max
150mW
hFE Gain
100

Quick Reference

The DTC114TE is a NPN bipolar junction transistor in a SOT-523 package, manufactured by JSCJ. It supports a breakdown voltage of 50V and continuous collector current of 100mA. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerJSCJOriginal Manufacturer
PackageSOT-523Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)50VMax breakdown voltage
Collector Current (Ic)100mAMax current handling
Power Dissipation (Pd)150mWMax thermal limit
DC Current Gain (hFE)100Base signal amplification ratio
Transition Frequency (fT)250MHzMax operating frequency
Saturation Voltage (VCEsat)-Voltage drop when fully ON
Emitter-Base Voltage (Vebo)-Max emitter-base breakdown
Collector Cutoff Current10kฮฉLeakage current when OFF
Operating Temp-55โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
DTC114YE-MS NPN SOT-523 50V 100mA 140 150mW
2SC4617 NPN SOT-523 50V 150mA 120 150mW
2SC4617TLR NPN SOT-523 50V 150mA 180 150mW
2DC4617S-7-F NPN SOT-523 50V 150mA 270 150mW
2SC4617R NPN SOT-523 50V 150mA 390 150mW
2SC4617 NPN SOT-523 50V 150mA 390 150mW
HXY MOSFET ๐Ÿ“„ PDF
2SC4738 NPN SOT-523 50V 150mA 700 100mW