DMT4015LDV-13 MOSFET Array Datasheet & Equivalents
N-Channel Array
VDFN-8
Standard Power
DIODES
Vds Max
40V
Id Max
21.2A
Rds(on)
25mΩ@4.5V
Vgs(th)
-
Quick Reference
The DMT4015LDV-13 is a N-Channel Array in a VDFN-8 package, manufactured by DIODES. Each channel supports a drain-source breakdown voltage of 40V and a continuous drain current of 21.2A. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DIODES | Original Manufacturer |
| Package | VDFN-8 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 40V | Max breakdown voltage |
| Continuous Drain Current (Id) | 21.2A | Max current handling |
| Power Dissipation (Pd) | 2W | Max thermal limit |
| On-Resistance (Rds(on)) | 25mΩ@4.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | - | Voltage required to turn on |
| Gate Charge (Qg) | 15.7nC@10V | Switching energy |
| Input Capacitance (Ciss) | 808pF | Internal gate capacitance |
| Output Capacitance (Coss) | 279pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| DMT47M2LDV-13 | N-Channel Array | VDFN-8 | 40V | 30.2A | 15mΩ@4.5V | 2.3V | DIODES 📄 PDF |
| DMT4015LDV-7 | N-Channel Array | VDFN-8 | 40V | 21.2A | 25mΩ@4.5V | 2.5V | DIODES 📄 PDF |
| DMT4014LDV-13 | N-Channel Array | VDFN-8 | 40V | 26.5A | 29mΩ@4.5V | 3V | DIODES 📄 PDF |