DMT4015LDV-7 MOSFET Array Datasheet & Equivalents

N-Channel Array VDFN-8 Logic-Level DIODES
Vds Max
40V
Id Max
21.2A
Rds(on)
25mΩ@4.5V
Vgs(th)
2.5V

Quick Reference

The DMT4015LDV-7 is a N-Channel Array in a VDFN-8 package, manufactured by DIODES. Each channel supports a drain-source breakdown voltage of 40V and a continuous drain current of 21.2A. It is ideal for high-density boards and compact switching circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackageVDFN-8Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategoryArrayConfiguration
Drain-Source Voltage (Vds)40VMax breakdown voltage
Continuous Drain Current (Id)21.2AMax current handling
Power Dissipation (Pd)2WMax thermal limit
On-Resistance (Rds(on))25mΩ@4.5VResistance when turned fully on
Gate Threshold (Vgs(th))2.5VVoltage required to turn on
Gate Charge (Qg)15.7nC@10VSwitching energy
Input Capacitance (Ciss)808pFInternal gate capacitance
Output Capacitance (Coss)279pFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
DMT47M2LDV-13 N-Channel Array VDFN-8 40V 30.2A 15mΩ@4.5V 2.3V
DIODES 📄 PDF
DMT4014LDV-13 N-Channel Array VDFN-8 40V 26.5A 29mΩ@4.5V 3V
DIODES 📄 PDF