DMP2110UFDBQ-13 MOSFET Array Datasheet & Equivalents

P-Channel Array UDFN2020-6 Logic-Level DIODES
Vds Max
20V
Id Max
3.2A
Rds(on)
168mΩ@1.8V
Vgs(th)
1V

Quick Reference

The DMP2110UFDBQ-13 is a P-Channel Array in a UDFN2020-6 package, manufactured by DIODES. Each channel supports a drain-source breakdown voltage of 20V and a continuous drain current of 3.2A. It is ideal for high-density boards and compact switching circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackageUDFN2020-6Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategoryArrayConfiguration
Drain-Source Voltage (Vds)20VMax breakdown voltage
Continuous Drain Current (Id)3.2AMax current handling
Power Dissipation (Pd)1.14WMax thermal limit
On-Resistance (Rds(on))168mΩ@1.8VResistance when turned fully on
Gate Threshold (Vgs(th))1VVoltage required to turn on
Gate Charge (Qg)12.7nC@8VSwitching energy
Input Capacitance (Ciss)443pFInternal gate capacitance
Output Capacitance (Coss)59pFInternal output capacitance
Operating Temp-Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
DMP2075UFDB-13 P-Channel Array UDFN2020-6 20V 3.8A 75mΩ@4.5V 1.4V
DIODES 📄 PDF
DMP2160UFDB-7 P-Channel Array UDFN2020-6 20V 3.8A 85mΩ@2.5V 900mV
DIODES 📄 PDF
DMP2065UFDB-13 P-Channel Array UDFN2020-6 20V 4.5A 100mΩ@2.5V 1V
DIODES 📄 PDF
DMP2090UFDB-13 P-Channel Array UDFN2020-6 20V 3.2A 120mΩ@2.5V 1V
DIODES 📄 PDF
DMP2110UFDB-13 P-Channel Array UDFN2020-6 20V 3.2A 168mΩ@1.8V 1V
DIODES 📄 PDF