DMP2160UFDB-7 MOSFET Array Datasheet & Equivalents

P-Channel Array UDFN2020-6 Logic-Level DIODES
Vds Max
20V
Id Max
3.8A
Rds(on)
85mΩ@2.5V
Vgs(th)
900mV

Quick Reference

The DMP2160UFDB-7 is a P-Channel Array in a UDFN2020-6 package, manufactured by DIODES. Each channel supports a drain-source breakdown voltage of 20V and a continuous drain current of 3.8A. It is ideal for high-density boards and compact switching circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackageUDFN2020-6Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategoryArrayConfiguration
Drain-Source Voltage (Vds)20VMax breakdown voltage
Continuous Drain Current (Id)3.8AMax current handling
Power Dissipation (Pd)1.4WMax thermal limit
On-Resistance (Rds(on))85mΩ@2.5VResistance when turned fully on
Gate Threshold (Vgs(th))900mVVoltage required to turn on
Gate Charge (Qg)6.5nC@4.5VSwitching energy
Input Capacitance (Ciss)536pFInternal gate capacitance
Output Capacitance (Coss)68pFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
DMP2075UFDB-13 P-Channel Array UDFN2020-6 20V 3.8A 75mΩ@4.5V 1.4V
DIODES 📄 PDF
DMP2065UFDB-13 P-Channel Array UDFN2020-6 20V 4.5A 100mΩ@2.5V 1V
DIODES 📄 PDF