DMN65D8LDWQ-7 MOSFET Array Datasheet & Equivalents

N-Channel Array SOT-363 Logic-Level DIODES
Vds Max
60V
Id Max
310mA
Rds(on)
3ฮฉ@10V
Vgs(th)
2V
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Quick Reference

The DMN65D8LDWQ-7 is a N-Channel Array in a SOT-363 package, manufactured by DIODES. Each channel supports a drain-source breakdown voltage of 60V and a continuous drain current of 310mA. It is ideal for high-density boards and compact switching circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackageSOT-363Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategoryArrayConfiguration
Drain-Source Voltage (Vds)60VMax breakdown voltage
Continuous Drain Current (Id)310mAMax current handling
Power Dissipation (Pd)540mWMax thermal limit
On-Resistance (Rds(on))3ฮฉ@10VResistance when turned fully on
Gate Threshold (Vgs(th))2VVoltage required to turn on
Gate Charge (Qg)870pC@10VSwitching energy
Input Capacitance (Ciss)22pFInternal gate capacitance
Output Capacitance (Coss)3.2pFInternal output capacitance
Operating Temp-55โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
2N7002DW-TP N-Channel Array SOT-363 60V 340mA 1.1ฮฉ@10V
1.3ฮฉ@4.5V		 2V
MCC ๐Ÿ“„ PDF
2N7002DW-TPQ2 N-Channel Array SOT-363 60V 340mA 3ฮฉ@4.5V 2.5V
MCC ๐Ÿ“„ PDF
DMN62D0UDW-13 N-Channel Array SOT-363 60V 350mA 3ฮฉ@2.5V 2V
DIODES ๐Ÿ“„ PDF
DMN61D9UDWQ-13 N-Channel Array SOT-363 60V 318mA 3.5ฮฉ@1.8V 2V
DIODES ๐Ÿ“„ PDF
DMN61D9UDWQ-7 N-Channel Array SOT-363 60V 318mA 3.5ฮฉ@1.8V 2V
DIODES ๐Ÿ“„ PDF
2N7002KDW-TPQ2 N-Channel Array SOT-363 60V 340mA 4ฮฉ@4.5V 2.5V
MCC ๐Ÿ“„ PDF
2N7002KDW-HF N-Channel Array SOT-363 60V 340mA 5.3ฮฉ@4.5V 2.5V
Comchip ๐Ÿ“„ PDF
Logic-Level N-Channel Array SOT-363 N-Channel Array