DMN61D9UDWQ-13 MOSFET Array Datasheet & Equivalents
N-Channel Array
SOT-363
Logic-Level
DIODES
Vds Max
60V
Id Max
318mA
Rds(on)
3.5Ω@1.8V
Vgs(th)
2V
Quick Reference
The DMN61D9UDWQ-13 is a N-Channel Array in a SOT-363 package, manufactured by DIODES. Each channel supports a drain-source breakdown voltage of 60V and a continuous drain current of 318mA. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DIODES | Original Manufacturer |
| Package | SOT-363 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 60V | Max breakdown voltage |
| Continuous Drain Current (Id) | 318mA | Max current handling |
| Power Dissipation (Pd) | 440mW | Max thermal limit |
| On-Resistance (Rds(on)) | 3.5Ω@1.8V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 2V | Voltage required to turn on |
| Gate Charge (Qg) | 600pC@4.5V | Switching energy |
| Input Capacitance (Ciss) | 39pF | Internal gate capacitance |
| Output Capacitance (Coss) | 18pF | Internal output capacitance |
| Operating Temp | - | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| 2N7002DW-TP | N-Channel Array | SOT-363 | 60V | 340mA | 1.1Ω@10V 1.3Ω@4.5V |
2V | MCC 📄 PDF |
| 2N7002DW-TPQ2 | N-Channel Array | SOT-363 | 60V | 340mA | 3Ω@4.5V | 2.5V | MCC 📄 PDF |
| DMN62D0UDW-13 | N-Channel Array | SOT-363 | 60V | 350mA | 3Ω@2.5V | 2V | DIODES 📄 PDF |
| DMN61D9UDWQ-7 | N-Channel Array | SOT-363 | 60V | 318mA | 3.5Ω@1.8V | 2V | DIODES 📄 PDF |
| 2N7002KDW-TPQ2 | N-Channel Array | SOT-363 | 60V | 340mA | 4Ω@4.5V | 2.5V | MCC 📄 PDF |
| 2N7002KDW-HF | N-Channel Array | SOT-363 | 60V | 340mA | 5.3Ω@4.5V | 2.5V | Comchip 📄 PDF |