DMN3018SSD-13 MOSFET Array Datasheet & Equivalents

N-Channel Array SO-8 Logic-Level DIODES
Vds Max
30V
Id Max
6.7A
Rds(on)
30mΩ@4.5V
Vgs(th)
2.1V

Quick Reference

The DMN3018SSD-13 is a N-Channel Array in a SO-8 package, manufactured by DIODES. Each channel supports a drain-source breakdown voltage of 30V and a continuous drain current of 6.7A. It is ideal for high-density boards and compact switching circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackageSO-8Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategoryArrayConfiguration
Drain-Source Voltage (Vds)30VMax breakdown voltage
Continuous Drain Current (Id)6.7AMax current handling
Power Dissipation (Pd)1.5WMax thermal limit
On-Resistance (Rds(on))30mΩ@4.5VResistance when turned fully on
Gate Threshold (Vgs(th))2.1VVoltage required to turn on
Gate Charge (Qg)13.2nC@10VSwitching energy
Input Capacitance (Ciss)697pFInternal gate capacitance
Output Capacitance (Coss)97pFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
STS10DN3LH5 N-Channel Array SO-8 30V 10A 21mΩ@10V 1V
DMT3020LSD-13 N-Channel Array SO-8 30V 16A 32mΩ@4.5V 2.5V
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DMT3020LSDQ-13 N-Channel Array SO-8 30V 16A 32mΩ@4.5V 2.5V
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SQJ208EP-T1_GE3 N-Channel Array SO-8 40V 60A 11.73mΩ@4.5V 2.4V
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SQ4284EY-T1_GE3 N-Channel Array SO-8 40V 8A 13.5mΩ@10V 2.5V
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SQ4284EY-T1_BE3 N-Channel Array SO-8 40V 8A 13.5mΩ@10V 2.5V
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SI4904DY-T1-E3 N-Channel Array SO-8 40V 8A 19mΩ@4.5V 2V
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SI4288DY-T1-GE3 N-Channel Array SO-8 40V 7.4A 20mΩ@10V 2.5V
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SQ4940AEY-T1_GE3 N-Channel Array SO-8 40V 8A 24mΩ@10V 2.5V
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SQJB60EP-T1_BE3 N-Channel Array SO-8 60V 30A 16mΩ@4.5V 2.5V
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SQ4946CEY-T1_GE3 N-Channel Array SO-8 60V 7A 40mΩ@10V 2.5V
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