SQ4284EY-T1_BE3 MOSFET Array Datasheet & Equivalents

N-Channel Array SO-8 Logic-Level VISHAY
Vds Max
40V
Id Max
8A
Rds(on)
13.5mΩ@10V
Vgs(th)
2.5V

Quick Reference

The SQ4284EY-T1_BE3 is a N-Channel Array in a SO-8 package, manufactured by VISHAY. Each channel supports a drain-source breakdown voltage of 40V and a continuous drain current of 8A. It is ideal for high-density boards and compact switching circuits.

Technical Specifications

ParameterValueDescription
ManufacturerVISHAYOriginal Manufacturer
PackageSO-8Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategoryArrayConfiguration
Drain-Source Voltage (Vds)40VMax breakdown voltage
Continuous Drain Current (Id)8AMax current handling
Power Dissipation (Pd)3.9WMax thermal limit
On-Resistance (Rds(on))13.5mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))2.5VVoltage required to turn on
Gate Charge (Qg)45nC@10VSwitching energy
Input Capacitance (Ciss)2.2nFInternal gate capacitance
Output Capacitance (Coss)315pFInternal output capacitance
Operating Temp-55℃~+175℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
SQJ208EP-T1_GE3 N-Channel Array SO-8 40V 60A 11.73mΩ@4.5V 2.4V
VISHAY 📄 PDF
SQ4284EY-T1_GE3 N-Channel Array SO-8 40V 8A 13.5mΩ@10V 2.5V
VISHAY 📄 PDF
SI4904DY-T1-E3 N-Channel Array SO-8 40V 8A 19mΩ@4.5V 2V
VISHAY 📄 PDF
DMNH4015SSDQ-13 N-Channel Array SO-8 40V 8.6A 20mΩ@4.5V 3V
DIODES 📄 PDF
SQ4940AEY-T1_GE3 N-Channel Array SO-8 40V 8A 24mΩ@10V 2.5V
VISHAY 📄 PDF
FDS8949 N-Channel Array SO-8 40V 9A 36mΩ@4.5V 3V
onsemi 📄 PDF
SQJB60EP-T1_BE3 N-Channel Array SO-8 60V 30A 16mΩ@4.5V 2.5V
VISHAY 📄 PDF
SI9634DY-T1-GE3 N-Channel Array SO-8 60V 8A 38mΩ@4.5V 3V
VISHAY 📄 PDF
DMNH6042SSD-13 N-Channel Array SO-8 60V 16.7A 65mΩ@4.5V 3V
DIODES 📄 PDF
DMNH6042SSDQ-13 N-Channel Array SO-8 60V 16.7A 65mΩ@4.5V 3V
DIODES 📄 PDF