DMG6302UDW-7 MOSFET Array Datasheet & Equivalents
P-Channel Array
SOT-363
Logic-Level
DIODES
Vds Max
25V
Id Max
150mA
Rds(on)
13ฮฉ@2.7V
Vgs(th)
1.5V
Quick Reference
The DMG6302UDW-7 is a P-Channel Array in a SOT-363 package, manufactured by DIODES. Each channel supports a drain-source breakdown voltage of 25V and a continuous drain current of 150mA. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DIODES | Original Manufacturer |
| Package | SOT-363 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 25V | Max breakdown voltage |
| Continuous Drain Current (Id) | 150mA | Max current handling |
| Power Dissipation (Pd) | 380mW | Max thermal limit |
| On-Resistance (Rds(on)) | 13ฮฉ@2.7V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1.5V | Voltage required to turn on |
| Gate Charge (Qg) | 340pC@4.5V | Switching energy |
| Input Capacitance (Ciss) | 5.9pF | Internal gate capacitance |
| Output Capacitance (Coss) | 1.5pF | Internal output capacitance |
| Operating Temp | -55โ~+150โ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| DMG6302UDW-13 | P-Channel Array | SOT-363 | 25V | 150mA | 13ฮฉ@2.7V | 1.5V | DIODES ๐ PDF |
| BSS84DW-TP | P-Channel Array | SOT-363 | 50V | 160mA | 2.2ฮฉ@10V | 2V | MCC ๐ PDF |
| BSS84KDW-TP | P-Channel Array | SOT-363 | 60V | 320mA | 7ฮฉ@4.5V | 2V | MCC ๐ PDF |