DMG6302UDW-13 MOSFET Array Datasheet & Equivalents

P-Channel Array SOT-363 Logic-Level DIODES
Vds Max
25V
Id Max
150mA
Rds(on)
13Ω@2.7V
Vgs(th)
1.5V

Quick Reference

The DMG6302UDW-13 is a P-Channel Array in a SOT-363 package, manufactured by DIODES. Each channel supports a drain-source breakdown voltage of 25V and a continuous drain current of 150mA. It is ideal for high-density boards and compact switching circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackageSOT-363Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategoryArrayConfiguration
Drain-Source Voltage (Vds)25VMax breakdown voltage
Continuous Drain Current (Id)150mAMax current handling
Power Dissipation (Pd)380mWMax thermal limit
On-Resistance (Rds(on))13Ω@2.7VResistance when turned fully on
Gate Threshold (Vgs(th))1.5VVoltage required to turn on
Gate Charge (Qg)-Switching energy
Input Capacitance (Ciss)30.7pFInternal gate capacitance
Output Capacitance (Coss)5.9pFInternal output capacitance
Operating Temp-Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
DMG6302UDW-7 P-Channel Array SOT-363 25V 150mA 13Ω@2.7V 1.5V
DIODES 📄 PDF
BSS84DW-TP P-Channel Array SOT-363 50V 160mA 2.2Ω@10V 2V
BSS84KDW-TP P-Channel Array SOT-363 60V 320mA 7Ω@4.5V 2V