DMD6014E MOSFET Datasheet & Specifications
N-Channel
TO-252
High-Voltage
ARK micro
Vds Max
600V
Id Max
80mA
Rds(on)
150Ī©@0V
Vgs(th)
3.3V
Quick Reference
The DMD6014E is an N-Channel MOSFET in a TO-252 package, manufactured by ARK micro. It supports a drain-source breakdown voltage of 600V and a continuous drain current of 80mA. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | ARK micro | Original Manufacturer |
| Package | TO-252 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 600V | Max breakdown voltage |
| Continuous Drain Current (Id) | 80mA | Max current handling |
| Power Dissipation (Pd) | 36W | Max thermal limit |
| On-Resistance (Rds(on)) | 150Ī©@0V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 3.3V | Voltage required to turn on |
| Gate Charge (Qg) | - | Switching energy |
| Input Capacitance (Ciss) | 62pF | Internal gate capacitance |
| Output Capacitance (Coss) | 13pF | Internal output capacitance |
| Operating Temp | -55ā~+150ā | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| H15N65D | N-Channel | TO-252 | 650V | 15A | 220mĪ©@10V | 3.5V | Huixin š PDF |
| WGD65R550L | N-Channel | TO-252 | 650V | 7A | 550mĪ©@10V | 2V | Wild Goose š PDF |
| H11N70D | N-Channel | TO-252 | 700V | 11A | 330mĪ©@10V | 3V | Huixin š PDF |
| IPD70R900P7S | N-Channel | TO-252 | 700V | 6A | 900mĪ©@10V | 3.5V | Infineon š PDF |