IPD70R900P7S MOSFET Datasheet & Specifications
N-Channel
TO-252
High-Voltage
Infineon
Vds Max
700V
Id Max
6A
Rds(on)
900mΩ@10V
Vgs(th)
3.5V
Quick Reference
The IPD70R900P7S is an N-Channel MOSFET in a TO-252 package, manufactured by Infineon. It supports a drain-source breakdown voltage of 700V and a continuous drain current of 6A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Infineon | Original Manufacturer |
| Package | TO-252 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 700V | Max breakdown voltage |
| Continuous Drain Current (Id) | 6A | Max current handling |
| Power Dissipation (Pd) | 30.5W | Max thermal limit |
| On-Resistance (Rds(on)) | 900mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 3.5V | Voltage required to turn on |
| Gate Charge (Qg) | 6.8nC@10V | Switching energy |
| Input Capacitance (Ciss) | 211pF | Internal gate capacitance |
| Output Capacitance (Coss) | 5pF | Internal output capacitance |
| Operating Temp | -40℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| H11N70D | N-Channel | TO-252 | 700V | 11A | 330mΩ@10V | 3V | Huixin 📄 PDF |
| 7N70G-TC-TN3-R | N-Channel | TO-252 | 700V | 7A | 1.7Ω@10V | 4V | UTC 📄 PDF |