DMC3400SDW-7 MOSFET Array Datasheet & Equivalents

Dual N/P-Channel SOT-363 Logic-Level DIODES
Vds Max
30V
Id Max
650mA
Rds(on)
900mΩ@10V
Vgs(th)
2.6V

Quick Reference

The DMC3400SDW-7 is a Dual N/P-Channel in a SOT-363 package, manufactured by DIODES. Each channel supports a drain-source breakdown voltage of 30V and a continuous drain current of 650mA. It is ideal for high-density boards and compact switching circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackageSOT-363Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategoryArrayConfiguration
Drain-Source Voltage (Vds)30VMax breakdown voltage
Continuous Drain Current (Id)650mAMax current handling
Power Dissipation (Pd)390mWMax thermal limit
On-Resistance (Rds(on))900mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))2.6VVoltage required to turn on
Gate Charge (Qg)1.4nC@10VSwitching energy
Input Capacitance (Ciss)55pFInternal gate capacitance
Output Capacitance (Coss)10pFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
SQ1539EH-T1_GE3 Dual N/P-Channel SOT-363 30V 850mA 280mΩ@10V
940mΩ@10V
1.8V
VISHAY 📄 PDF
DMC3401LDW-13 Dual N/P-Channel SOT-363 30V;30V 800mA;550mA 400mΩ@10V
900mΩ@10V
1.2V;2.2V
DIODES 📄 PDF
DMC3401LDW-7 Dual N/P-Channel SOT-363 30V;30V 800mA;550mA 400mΩ@10V
900mΩ@10V
1.2V;2.2V
DIODES 📄 PDF