DMC3016LSD-13 MOSFET Array Datasheet & Equivalents
Dual N/P-Channel
SO-8
Logic-Level
DIODES
Vds Max
30V
Id Max
8.2A
Rds(on)
38mΩ@4.5V
Vgs(th)
3V
Quick Reference
The DMC3016LSD-13 is a Dual N/P-Channel in a SO-8 package, manufactured by DIODES. Each channel supports a drain-source breakdown voltage of 30V and a continuous drain current of 8.2A. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DIODES | Original Manufacturer |
| Package | SO-8 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 30V | Max breakdown voltage |
| Continuous Drain Current (Id) | 8.2A | Max current handling |
| Power Dissipation (Pd) | 1.6W | Max thermal limit |
| On-Resistance (Rds(on)) | 38mΩ@4.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 3V | Voltage required to turn on |
| Gate Charge (Qg) | 25.1nC@10V | Switching energy |
| Input Capacitance (Ciss) | 1.415nF | Internal gate capacitance |
| Output Capacitance (Coss) | 147pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| DMC3021LSD-13 | Dual N/P-Channel | SO-8 | 30V;30V | 8.5A;7A | 14mΩ@10V 30mΩ@10V |
1.45V;1.7V | DIODES 📄 PDF |
| FDS8858CZ | Dual N/P-Channel | SO-8 | 30V | 8.6A | 20.5mΩ@10V | 3V | onsemi 📄 PDF |
| DMC3025LSD-13 | Dual N/P-Channel | SO-8 | 30V | 8.5A | 32mΩ@4.5V | 2V | DIODES 📄 PDF |
| SI4564DY-T1-GE3 | Dual N/P-Channel | SO-8 | 40V | 10A | 28mΩ@4.5V | 2.5V | VISHAY 📄 PDF |
| DMC4029SSDQ-13 | Dual N/P-Channel | SO-8 | 40V | 9A | 55mΩ@4.5V | 3V | DIODES 📄 PDF |