DMC25D0UVT-13 MOSFET Array Datasheet & Equivalents
Dual N/P-Channel
TSOT-23-6
Logic-Level
DIODES
Vds Max
30V
Id Max
3.2A
Rds(on)
-
Vgs(th)
1.5V
Quick Reference
The DMC25D0UVT-13 is a Dual N/P-Channel in a TSOT-23-6 package, manufactured by DIODES. Each channel supports a drain-source breakdown voltage of 30V and a continuous drain current of 3.2A. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DIODES | Original Manufacturer |
| Package | TSOT-23-6 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 30V | Max breakdown voltage |
| Continuous Drain Current (Id) | 3.2A | Max current handling |
| Power Dissipation (Pd) | 1.2W | Max thermal limit |
| On-Resistance (Rds(on)) | - | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1.5V | Voltage required to turn on |
| Gate Charge (Qg) | 21nC@10V | Switching energy |
| Input Capacitance (Ciss) | 854pF | Internal gate capacitance |
| Output Capacitance (Coss) | 53pF | Internal output capacitance |
| Operating Temp | -55โ~+150โ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| DMG6602SVTQ-7 | Dual N/P-Channel | TSOT-23-6 | 30V | 3.4A;2.8A | 60mฮฉ@10V 95mฮฉ@10V |
1.9V;1V | DIODES ๐ PDF |