DMG6602SVTQ-7 MOSFET Array Datasheet & Equivalents
Dual N/P-Channel
TSOT-23-6
Logic-Level
DIODES
Vds Max
30V
Id Max
3.4A;2.8A
Rds(on)
60mΩ@10V;95mΩ@10V
Vgs(th)
1.9V;1V
Quick Reference
The DMG6602SVTQ-7 is a Dual N/P-Channel in a TSOT-23-6 package, manufactured by DIODES. Each channel supports a drain-source breakdown voltage of 30V and a continuous drain current of 3.4A;2.8A. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DIODES | Original Manufacturer |
| Package | TSOT-23-6 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 30V | Max breakdown voltage |
| Continuous Drain Current (Id) | 3.4A;2.8A | Max current handling |
| Power Dissipation (Pd) | 840mW;1.27W | Max thermal limit |
| On-Resistance (Rds(on)) | 60mΩ@10V;95mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1.9V;1V | Voltage required to turn on |
| Gate Charge (Qg) | 9nC@10V;7nC@10V | Switching energy |
| Input Capacitance (Ciss) | - | Internal gate capacitance |
| Output Capacitance (Coss) | - | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||