D882M Transistor Datasheet & Specifications
NPNTO-252General Purpose
VCEO
-
Ic Max
30V
Pd Max
3A
Gain
-55℃~+150℃
Quick Reference
The D882M is a NPN bipolar transistor in a TO-252 package. This datasheet provides complete specifications including - breakdown voltage and 30V continuous collector current. Download the D882M datasheet PDF below for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | HT(Shenzhen Jinyu Semicon) | Original Manufacturer |
| Package | TO-252 | Physical mounting |
| VCEO | - | Breakdown voltage |
| IC Max | 30V | Collector current |
| Pd Max | 3A | Power dissipation |
| Gain | -55℃~+150℃ | DC current gain |
| Frequency | - | Transition speed |
| VCEsat | 90MHz | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Temp | 1.25W | Operating temp |
Direct Replacements & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| 2SD882 | NPN | SOT-89 | - | 30V | 3A |
| 2SD1815S-TL-E | NPN | TO-252 | - | 100V | 3A |
| 2SC5707-TL-E | NPN | TO-252 | - | 50V | 8A |