2SC5707-TL-E Transistor Datasheet & Specifications

NPN BJT | onsemi

NPNTO-252General Purpose
VCEO
-
Ic Max
50V
Pd Max
8A
Gain
-

Quick Reference

The 2SC5707-TL-E is a NPN bipolar transistor in a TO-252 package. This datasheet provides complete specifications including - breakdown voltage and 50V continuous collector current. Download the 2SC5707-TL-E datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageTO-252Physical mounting
VCEO-Breakdown voltage
IC Max50VCollector current
Pd Max8APower dissipation
Gain-DC current gain
Frequency200Transition speed
VCEsat330MHzSaturation voltage
Vebo100nAEmitter-Base voltage
Temp1WOperating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
2SD882NPNSOT-89-30V3A
2SD1815S-TL-ENPNTO-252-100V3A
D882MNPNTO-252-30V3A