D882(RANGE:160-320) Datasheet & Equivalents

NPN TO-126 General Purpose JSCJ
VCEO
30V
Ic Max
3A
Pd Max
1.25W
hFE Gain
160

Quick Reference

The D882(RANGE:160-320) is a NPN bipolar junction transistor in a TO-126 package, manufactured by JSCJ. It supports a breakdown voltage of 30V and continuous collector current of 3A. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerJSCJOriginal Manufacturer
PackageTO-126Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)30VMax breakdown voltage
Collector Current (Ic)3AMax current handling
Power Dissipation (Pd)1.25WMax thermal limit
DC Current Gain (hFE)160Base signal amplification ratio
Transition Frequency (fT)90MHzMax operating frequency
Saturation Voltage (VCEsat)500mVVoltage drop when fully ON
Emitter-Base Voltage (Vebo)6VMax emitter-base breakdown
Collector Cutoff Current1uALeakage current when OFF
Operating Temp-55โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
2SD882L-P-T60-K NPN TO-126 30V 3A 160 1W
2SD882 NPN TO-126 30V 3A 100 12.5W
KSD882YSTU-HXY NPN TO-126 30V 3A - 1.25W
HXY MOSFET ๐Ÿ“„ PDF
KTD882-Y-U/PH-HXY NPN TO-126 30V 3A - 1.25W
HXY MOSFET ๐Ÿ“„ PDF
2SD882 NPN TO-126 30V 3A - 1.25W
HXY MOSFET ๐Ÿ“„ PDF
BD437 NPN TO-126 45V 4A 140 36W
BD437 NPN TO-126 45V 4A 30 36W
KSD1691YSTU NPN TO-126 60V 5A 60 1.3W