2SD882L-P-T60-K Datasheet & Equivalents
NPN
TO-126
General Purpose
UTC
VCEO
30V
Ic Max
3A
Pd Max
1W
hFE Gain
160
Quick Reference
The 2SD882L-P-T60-K is a NPN bipolar junction transistor in a TO-126 package, manufactured by UTC. It supports a breakdown voltage of 30V and continuous collector current of 3A. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | UTC | Original Manufacturer |
| Package | TO-126 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 30V | Max breakdown voltage |
| Collector Current (Ic) | 3A | Max current handling |
| Power Dissipation (Pd) | 1W | Max thermal limit |
| DC Current Gain (hFE) | 160 | Base signal amplification ratio |
| Transition Frequency (fT) | 80MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | 300mV | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | 7V | Max emitter-base breakdown |
| Collector Cutoff Current | 1uA | Leakage current when OFF |
| Operating Temp | - | Safe junction temperature range |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | IC | hFE | Pd | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| D882(RANGE:160-320) | NPN | TO-126 | 30V | 3A | 160 | 1.25W | JSCJ 📄 PDF |
| 2SD882 | NPN | TO-126 | 30V | 3A | 100 | 12.5W | ST 📄 PDF |
| KSD882YSTU-HXY | NPN | TO-126 | 30V | 3A | - | 1.25W | HXY MOSFET 📄 PDF |
| KTD882-Y-U/PH-HXY | NPN | TO-126 | 30V | 3A | - | 1.25W | HXY MOSFET 📄 PDF |
| 2SD882 | NPN | TO-126 | 30V | 3A | - | 1.25W | HXY MOSFET 📄 PDF |
| BD437 | NPN | TO-126 | 45V | 4A | 140 | 36W | YFW 📄 PDF |
| BD437 | NPN | TO-126 | 45V | 4A | 30 | 36W | ST 📄 PDF |
| KSD1691YSTU | NPN | TO-126 | 60V | 5A | 60 | 1.3W | onsemi 📄 PDF |