D44H11G Datasheet & Equivalents

NPN TO-220 High Power onsemi
VCEO
80V
Ic Max
10A
Pd Max
70W
hFE Gain
40

Quick Reference

The D44H11G is a NPN bipolar junction transistor in a TO-220 package, manufactured by onsemi. It supports a breakdown voltage of 80V and continuous collector current of 10A. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageTO-220Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)80VMax breakdown voltage
Collector Current (Ic)10AMax current handling
Power Dissipation (Pd)70WMax thermal limit
DC Current Gain (hFE)40Base signal amplification ratio
Transition Frequency (fT)50MHzMax operating frequency
Saturation Voltage (VCEsat)1VVoltage drop when fully ON
Emitter-Base Voltage (Vebo)5VMax emitter-base breakdown
Collector Cutoff Current10uALeakage current when OFF
Operating Temp-55โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
D44H11 NPN TO-220 80V 10A 40 50W
D44H11 NPN TO-220 80V 10A 40 50W
BD809 NPN TO-220 80V 10A 30 90W
D44VH10G NPN TO-220 80V 15A 35 83W
2N6488 NPN TO-220 80V 15A 150 75W
2SC3157 NPN TO-220 100V 10A 200 60W
BDX33C NPN TO-220 100V 10A 750 70W
BDW93C NPN TO-220 100V 12A 20000 80W