CSD17579Q5A MOSFET Datasheet & Specifications

N-Channel VSONP-8(5x6) Logic-Level TI
Vds Max
30V
Id Max
46A
Rds(on)
8.4mΩ@10V
Vgs(th)
1.5V

Quick Reference

The CSD17579Q5A is an N-Channel MOSFET in a VSONP-8(5x6) package, manufactured by TI. It supports a drain-source breakdown voltage of 30V and a continuous drain current of 46A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerTIOriginal Manufacturer
PackageVSONP-8(5x6)Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)30VMax breakdown voltage
Continuous Drain Current (Id)46AMax current handling
Power Dissipation (Pd)36WMax thermal limit
On-Resistance (Rds(on))8.4mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))1.5VVoltage required to turn on
Gate Charge (Qg)11.6nC@10VSwitching energy
Input Capacitance (Ciss)1.03nFInternal gate capacitance
Output Capacitance (Coss)124pFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
CSD18514Q5A N-Channel VSONP-8(5x6) 40V 50A 4.1mΩ@10V 1.8V
CSD18531Q5A N-Channel VSONP-8(5x6) 60V 134A 3.5mΩ@10V 1.8V