CSD18514Q5A MOSFET Datasheet & Specifications

N-Channel VSONP-8(5x6) Logic-Level TI
Vds Max
40V
Id Max
50A
Rds(on)
4.1mΩ@10V
Vgs(th)
1.8V

Quick Reference

The CSD18514Q5A is an N-Channel MOSFET in a VSONP-8(5x6) package, manufactured by TI. It supports a drain-source breakdown voltage of 40V and a continuous drain current of 50A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerTIOriginal Manufacturer
PackageVSONP-8(5x6)Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)40VMax breakdown voltage
Continuous Drain Current (Id)50AMax current handling
Power Dissipation (Pd)3.1WMax thermal limit
On-Resistance (Rds(on))4.1mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))1.8VVoltage required to turn on
Gate Charge (Qg)29nC@10VSwitching energy
Input Capacitance (Ciss)2.68nFInternal gate capacitance
Output Capacitance (Coss)267pFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
CSD18531Q5A N-Channel VSONP-8(5x6) 60V 134A 3.5mΩ@10V 1.8V
CSD18533Q5A N-Channel VSONP-8(5x6) 60V 103A 8.5mΩ@4.5V 2.3V