C2M1000170D MOSFET Datasheet & Specifications
N-Channel
TO-247-3
High-Voltage
FUXINSEMI
Vds Max
1.7kV
Id Max
5A
Rds(on)
1.4ฮฉ
Vgs(th)
4V
Quick Reference
The C2M1000170D is an N-Channel MOSFET in a TO-247-3 package, manufactured by FUXINSEMI. It supports a drain-source breakdown voltage of 1.7kV and a continuous drain current of 5A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | FUXINSEMI | Original Manufacturer |
| Package | TO-247-3 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 1.7kV | Max breakdown voltage |
| Continuous Drain Current (Id) | 5A | Max current handling |
| Power Dissipation (Pd) | 69W | Max thermal limit |
| On-Resistance (Rds(on)) | 1.4ฮฉ | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 4V | Voltage required to turn on |
| Gate Charge (Qg) | 22nC | Switching energy |
| Input Capacitance (Ciss) | 215pF | Internal gate capacitance |
| Output Capacitance (Coss) | 19pF | Internal output capacitance |
| Operating Temp | -55โ~+150โ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| CI7N170SM | N-Channel | TO-247-3 | 1.7kV | 7A | 850mฮฉ | 4V | Tokmas ๐ PDF |
| CI72N170SM | N-Channel | TO-247-3 | 1.7kV | 72A | - | 4V | Tokmas ๐ PDF |