CI7N170SM MOSFET Datasheet & Specifications

N-Channel TO-247-3 High-Voltage Tokmas
Vds Max
1.7kV
Id Max
7A
Rds(on)
850mฮฉ
Vgs(th)
4V

Quick Reference

The CI7N170SM is an N-Channel MOSFET in a TO-247-3 package, manufactured by Tokmas. It supports a drain-source breakdown voltage of 1.7kV and a continuous drain current of 7A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerTokmasOriginal Manufacturer
PackageTO-247-3Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)1.7kVMax breakdown voltage
Continuous Drain Current (Id)7AMax current handling
Power Dissipation (Pd)62WMax thermal limit
On-Resistance (Rds(on))850mฮฉResistance when turned fully on
Gate Threshold (Vgs(th))4VVoltage required to turn on
Gate Charge (Qg)23nCSwitching energy
Input Capacitance (Ciss)194pFInternal gate capacitance
Output Capacitance (Coss)13pFInternal output capacitance
Operating Temp-55โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
CI72N170SM N-Channel TO-247-3 1.7kV 72A - 4V