BU508AF Datasheet & Equivalents

NPN TO-3P High Power ST
VCEO
700V
Ic Max
8A
Pd Max
50W
hFE Gain
5

Quick Reference

The BU508AF is a NPN bipolar junction transistor in a TO-3P package, manufactured by ST. It supports a breakdown voltage of 700V and continuous collector current of 8A. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerSTOriginal Manufacturer
PackageTO-3PPhysical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)700VMax breakdown voltage
Collector Current (Ic)8AMax current handling
Power Dissipation (Pd)50WMax thermal limit
DC Current Gain (hFE)5Base signal amplification ratio
Transition Frequency (fT)-Max operating frequency
Saturation Voltage (VCEsat)1VVoltage drop when fully ON
Emitter-Base Voltage (Vebo)-Max emitter-base breakdown
Collector Cutoff Current2mALeakage current when OFF
Operating Temp-65โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
BUH517 NPN TO-3P 700V 8A 6 60W
BU508A NPN TO-3P 700V 8A 30 125W
2SC5297 NPN TO-3P 800V 8A 30 60W
2SC3307 NPN TO-3P 800V 10A 10 150W
2SD1887 NPN TO-3P 800V 10A 10 70W
2SC5299 NPN TO-3P 800V 10A 30 70W
FJL6920 NPN TO-3P 800V 20A 8 200W
2SC3998 NPN TO-3P 800V 20A 40 200W