BU508A Datasheet & Equivalents

NPN TO-3P High Power SPTECH
VCEO
700V
Ic Max
8A
Pd Max
125W
hFE Gain
30

Quick Reference

The BU508A is a NPN bipolar junction transistor in a TO-3P package, manufactured by SPTECH. It supports a breakdown voltage of 700V and continuous collector current of 8A. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerSPTECHOriginal Manufacturer
PackageTO-3PPhysical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)700VMax breakdown voltage
Collector Current (Ic)8AMax current handling
Power Dissipation (Pd)125WMax thermal limit
DC Current Gain (hFE)30Base signal amplification ratio
Transition Frequency (fT)7MHzMax operating frequency
Saturation Voltage (VCEsat)1VVoltage drop when fully ON
Emitter-Base Voltage (Vebo)5VMax emitter-base breakdown
Collector Cutoff Current-Leakage current when OFF
Operating Temp-Safe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
BUH517 NPN TO-3P 700V 8A 6 60W
BU508AF NPN TO-3P 700V 8A 5 50W
2SC5297 NPN TO-3P 800V 8A 30 60W
2SC5299 NPN TO-3P 800V 10A 30 70W
2SC3307 NPN TO-3P 800V 10A 10 150W
2SD1887 NPN TO-3P 800V 10A 10 70W
2SC3998 NPN TO-3P 800V 20A 40 200W
FJL6920 NPN TO-3P 800V 20A 8 200W