BSS63LT1G Transistor Datasheet & Specifications

PNP BJT | onsemi

PNPSOT-23General Purpose
VCEO
100V
Ic Max
100mA
Pd Max
225mW
Gain
-
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Quick Reference

The BSS63LT1G is a PNP bipolar transistor in a SOT-23 package. This datasheet provides complete specifications including 100V breakdown voltage and 100mA continuous collector current. Download the BSS63LT1G datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageSOT-23Physical mounting
VCEO100VBreakdown voltage
IC Max100mACollector current
Pd Max225mWPower dissipation
Gain-DC current gain
Frequency-Transition speed
VCEsat-Saturation voltage
Vebo95MHzEmitter-Base voltage
Temp-55℃~+150℃Operating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
ZXTP25100BFHTAPNPSOT-23100V2A1.25W
MMBTA56-7-FPNPSOT-2380V500mA350mW
SMMBTA56LT1GPNPSOT-2380V500mA300mW
MMBTA56LT3GPNPSOT-2380V500mA225mW
SMMBTA56LT3GPNPSOT-2380V500mA300mW
PMBTA56-HXYPNPSOT-2380V500mA225mW
MMBTA56LT1GPNPSOT-2380V500mA225mW
CMPTA56-HXYPNPSOT-2380V500mA225mW
FMMTA56TA-HXYPNPSOT-2380V500mA225mW
MMBTA56PNPSOT-2380V500mA300mW
View all SOT-23 PNP Transistors ›