BSC093N04LSG MOSFET Datasheet & Specifications

N-Channel TDSON-8(5x6) Logic-Level Infineon
Vds Max
40V
Id Max
49A
Rds(on)
9.3mΩ@10V
Vgs(th)
2V

Quick Reference

The BSC093N04LSG is an N-Channel MOSFET in a TDSON-8(5x6) package, manufactured by Infineon. It supports a drain-source breakdown voltage of 40V and a continuous drain current of 49A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerInfineonOriginal Manufacturer
PackageTDSON-8(5x6)Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)40VMax breakdown voltage
Continuous Drain Current (Id)49AMax current handling
Power Dissipation (Pd)35WMax thermal limit
On-Resistance (Rds(on))9.3mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))2VVoltage required to turn on
Gate Charge (Qg)24nC@10VSwitching energy
Input Capacitance (Ciss)1.9nFInternal gate capacitance
Output Capacitance (Coss)450pFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
BSC032N04LS N-Channel TDSON-8(5x6) 40V 98A 3.2mΩ@10V 2V
Infineon 📄 PDF
BSC035N04LS G N-Channel TDSON-8(5x6) 40V 100A 3.5mΩ@10V 2V
Infineon 📄 PDF
BSC026N04LS N-Channel TDSON-8(5x6) 40V 119A 3.6mΩ@4.5V 2V
Infineon 📄 PDF
BSC067N06LS3G N-Channel TDSON-8(5x6) 60V 50A 6.7mΩ@10V 2.2V
Infineon 📄 PDF