BSC035N04LS G MOSFET Datasheet & Specifications

N-Channel TDSON-8(5x6) Logic-Level Infineon
Vds Max
40V
Id Max
100A
Rds(on)
3.5mΩ@10V
Vgs(th)
2V

Quick Reference

The BSC035N04LS G is an N-Channel MOSFET in a TDSON-8(5x6) package, manufactured by Infineon. It supports a drain-source breakdown voltage of 40V and a continuous drain current of 100A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerInfineonOriginal Manufacturer
PackageTDSON-8(5x6)Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)40VMax breakdown voltage
Continuous Drain Current (Id)100AMax current handling
Power Dissipation (Pd)69WMax thermal limit
On-Resistance (Rds(on))3.5mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))2VVoltage required to turn on
Gate Charge (Qg)64nC@10VSwitching energy
Input Capacitance (Ciss)5.1nFInternal gate capacitance
Output Capacitance (Coss)1.1nFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
BSC026N04LS N-Channel TDSON-8(5x6) 40V 119A 3.6mΩ@4.5V 2V
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