BSC054N04NSG MOSFET Datasheet & Specifications

N-Channel TDSON-8(5x6) High-Current Infineon
Vds Max
40V
Id Max
81A
Rds(on)
5.4mΩ@10V
Vgs(th)
4V

Quick Reference

The BSC054N04NSG is an N-Channel MOSFET in a TDSON-8(5x6) package, manufactured by Infineon. It supports a drain-source breakdown voltage of 40V and a continuous drain current of 81A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerInfineonOriginal Manufacturer
PackageTDSON-8(5x6)Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)40VMax breakdown voltage
Continuous Drain Current (Id)81AMax current handling
Power Dissipation (Pd)57WMax thermal limit
On-Resistance (Rds(on))5.4mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))4VVoltage required to turn on
Gate Charge (Qg)26nCSwitching energy
Input Capacitance (Ciss)2.1nFInternal gate capacitance
Output Capacitance (Coss)620pFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
BSC032N04LS N-Channel TDSON-8(5x6) 40V 98A 3.2mΩ@10V 2V
Infineon 📄 PDF
BSC035N04LS G N-Channel TDSON-8(5x6) 40V 100A 3.5mΩ@10V 2V
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BSC026N04LS N-Channel TDSON-8(5x6) 40V 119A 3.6mΩ@4.5V 2V
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BSC028N06NS N-Channel TDSON-8(5x6) 60V 100A 2.8mΩ@10V 3.3V
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BSC037N08NS5 N-Channel TDSON-8(5x6) 80V 84A 3.7mΩ@10V 3.8V
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BSC035N10NS5 N-Channel TDSON-8(5x6) 100V 100A 3.5mΩ@10V 3.8V
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BSC070N10NS3G N-Channel TDSON-8(5x6) 100V 90A 7mΩ@10V 3.5V
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BSC077N12NS3G N-Channel TDSON-8(5x6) 120V 98A 6.6mΩ@10V 3V
Infineon 📄 PDF