BFU730F,115 Datasheet & Equivalents
NPN
SOT-343
General Purpose
NXP
VCEO
2.8V
Ic Max
30mA
Pd Max
197mW
hFE Gain
205
Quick Reference
The BFU730F,115 is a NPN bipolar junction transistor in a SOT-343 package, manufactured by NXP. It supports a breakdown voltage of 2.8V and continuous collector current of 30mA. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | NXP | Original Manufacturer |
| Package | SOT-343 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 2.8V | Max breakdown voltage |
| Collector Current (Ic) | 30mA | Max current handling |
| Power Dissipation (Pd) | 197mW | Max thermal limit |
| DC Current Gain (hFE) | 205 | Base signal amplification ratio |
| Transition Frequency (fT) | 55GHz | Max operating frequency |
| Saturation Voltage (VCEsat) | - | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | 1V | Max emitter-base breakdown |
| Collector Cutoff Current | 100nA | Leakage current when OFF |
| Operating Temp | - | Safe junction temperature range |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | IC | hFE | Pd | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| BFP640H6327 | NPN | SOT-343 | 4.1V | 50mA | 110 | 200mW | Infineon 📄 PDF |